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data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 1 general description the ap2114 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1a (min) continuous load current. the ap2114 features low power consumption. the ap2114 is available in 1.2v, 1.5v, 1.8v, 2.5v and 3.3v regulator output and 0.8v to 5v adjustable output, and available in excellent output accuracy 1.5%, it is also available in an excellent load regulation and line regulation performance. the ap2114 is available in standard packages of sot-223, to-252-2 (1), to-252-2 (3), to-252-2 (4), to-263-3, soic-8 and psop-8. features ? output voltage accuracy: 1.5% ? output current: 1a (min) ? fold-back short current protection: 50ma ? low dropout voltage (3.3v): 450mv (typ) @i out =1a ? stable with 4.7 f flexible cap: ceramic, tantalum and aluminum electrolytic ? excellent line regulation: 0.02%/v (typ), 0.1%/v (max) @ i out =30ma ? excellent load regulation: 0.2%a (typ) @ i out =1ma to 1a ? low quiescent current: 60 a (1.2v/1.5v/1.8v /2.5v/adj) ? low output noise: 30 v rms ? psrr: 68db @ freq=1khz (1.2v/1.5v/1.8v /adj) ? otsd protection ? operating temperature range: -40c to 85c ? esd: mm 400v, hbm 4000v applications ? lcd monitor ? lcd tv ? stb figure 1. package types of ap2114 sot-223 to-263-3 to-252-2 (1) to-252-2 (3) to-252-2 (4) soic-8 psop-8
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 2 pin configuration h/ha package s package (sot-223) (to-263-3) h ha d/da package d da (to-252-2 (1)) (to-252-2 (3)) (to-252-2 (1)) (to-252-2 (3)) (to-252-2 (4)) (to-252-2 (4)) m package mp package (soic-8) (psop-8) for fixed versions for adjustable version for fixed versions for adjustable version figure 2. pin configuration of ap2114 (top view) 1 2 3 gnd vin vout vout 1 2 3 gnd vin vout gnd 1 2 3 4 8 7 6 5 gnd vout gnd vin en gnd gnd gnd 1 2 3 4 8 7 6 5 gnd vout gnd vin en gnd gnd gnd 1 2 3 4 8 7 6 5 vin en vout gnd adj gnd gnd gnd vin en vout gnd adj gnd gnd gnd 1 2 3 4 8 7 6 5 1 2 3 vin vout gnd vout 1 2 3 vin vout gnd gnd 1 2 3 vin vout gnd gnd 1 2 3 vin vout gnd vout
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 3 pin descriptions pin number pin name function sot-223 (h), to-263-3, to-252-2 (1) (d) to-252-2 (3) (d) to-252-2 (4) (d) sot-223 (ha), to-252-2 (1) (da) to-252-2 (3) (da) to-252-2 (4) (da) soic-8, psop-8 (fixed) soic-8, psop-8 (adj) 1 2 1, 3, 5, 6, 7 2, 3, 5, 7 gnd ground 2 3 2 8 vout regulated output 3 1 4 1 vin input voltage pin 8 4 en chip enable, h?normal work, l? shutdown output 6 adj adjust output functional block diagram for fixed versions shutdown logic thermal shutdown foldback current limit v ref gnd en vin 3m vout a (b) a : sot- 223 , to-263-3 , to- 252- 2 (1)/(3 b : soic-8 , psop-8 (8) 1 (1, 3, 5, 6, 7) 2 (2) 3 (4) {2} {3} {1} {c} (h) c: sot-223 , (ha) to- 252- 2 (1)/(3 (da) 4) (d) )/( )/(4)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 4 functional block diagram (continued) for adj version figure 3. functional block diagram of ap2114 shutdown logic thermal shutdown foldback current limit v ref gnd en vin 3 vout soic-8 , psop-8 8 1 adj 4 6 m 2, 3, 5, 7
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 5 ordering information ap2114 - circuit type g1: green package temperature range output voltage part number marking id packing type sot-223 -40 to 85 c 1.2v (h) ap2114h-1.2trg1 gh12c tape & reel 1.5v (h) ap2114h-1.5trg1 gh16g tape & reel 1.8v (h) ap2114h-1.8trg1 gh12d tape & reel 2.5v (h) ap2114h-2.5trg1 gh14c tape & reel 3.3v (h) ap2114h-3.3trg1 gh12e tape & reel sot-223 -40 to 85 c 1.2v (ha) ap2114ha-1.2trg1 gh13b tape & reel 1.5v (ha) ap2114ha-1.5trg 1 gh16h tape & reel 1.8v (ha) ap2114ha-1.8trg1 gh14d tape & reel 2.5v (ha) ap2114ha-2.5trg 1 gh14e tape & reel 3.3v (ha) ap2114ha-3.3trg1 gh14f tape & reel to-252-2 (1)/ to-252-2 (3)/ to-252-2 (4) -40 to 85 c 1.2v (d) ap2114d-1.2trg1 ap2114d-1.2g1 tape & reel 1.5v (d) ap2114d-1.5trg1 ap2114d-1.5g1 tape & reel 1.8v (d) ap2114d-1.8trg1 ap2114d-1.8g1 tape & reel 2.5v (d) ap2114d-2.5trg1 ap2114d-2.5g1 tape & reel 3.3v (d) ap2114d-3.3trg1 ap2114d-3.3g1 tape & reel to-252-2 (1)/ to-252-2 (3)/ to-252-2 (4) -40 to 85 c 1.2v (da) ap2114da-1.2trg1 ap2114da-1.2g1 tape & reel 1.5v (da) ap2114da-1.5trg1 ap2114da-1.5g1 tape & reel 1.8v (da) ap2114da-1.8trg1 ap2114da-1.8g1 tape & reel 2.5v (da) ap2114da-2.5trg1 ap2114da-2.5g1 tape & reel 3.3v (da) ap2114da-3.3trg1 ap2114da-3.3g1 tape & reel to-263-3 -40 to 85 c 1.2v ap2114s-1.2trg1 ap2114s-1.2g1 tape & reel 1.5v ap2114s-1.5trg1 ap2114s-1.5g1 tape & reel 1.8v ap2114s-1.8trg1 ap2114s-1.8g1 tape & reel 2.5v ap2114s-2.5trg1 ap2114s-2.5g1 tape & reel 3.3v ap2114s-3.3trg1 ap2114s-3.3g1 tape & reel soic-8 -40 to 85 c 1.2v ap2114m-1.2trg1 2114m-1.2g1 tape & reel 1.5v ap2114m-1.5trg1 2114m-1.5g1 tape & reel 1.8v ap2114m-1.8trg1 2114m-1.8g1 tape & reel 2.5v ap2114m-2.5trg1 2114m-2.5g1 tape & reel 3.3v ap2114m-3.3trg1 2114m-3.3g1 tape & reel adj ap2114m-adjg1 2114m-adjg1 tube ap2114m-adjtrg1 2114m-adj g1 tape & reel blank: tube tr: tape & reel 1.2: fixed output 1.2v 1.5: fixed output 1.5v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.3: fixed output 3.3v adj: adj output package h/ha: sot-223 d/da: to-252-2 (1)/(3)/(4) s: to-263-3 m: soic-8 mp: psop-8
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 6 ordering information (continued) package temperature range output voltage part number marking id packing type psop-8 -40 to 85 c 1.2v ap2114mp-1.2trg1 2114m p-1.2g1 tape & reel 1.5v ap2114mp-1.5trg1 2114m p-1.5g1 tape & reel 1.8v ap2114mp-1.8trg1 2114m p-1.8g1 tape & reel 2.5v ap2114mp-2.5trg1 2114m p-2.5g1 tape & reel 3.3v ap2114mp-3.3trg1 2114m p-3.3g1 tape & reel adj ap2114mp-adjg1 2114m p-adjg1 tube ap2114mp-adjtrg1 2114mp-ad jg1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 7 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc thermal resistance junction to ambient (no heatsink) ja soic-8 144 c/w psop-8 143 sot-223 128 to-252-2 (1)/ to-252-2 (3)/ to-252-2 (4) 90 to-263-3 73 esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.5 6.0 v operating ambient temperature range t a -40 85 c
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 8 electrical characteristics ap2114-1.2 electrical ch aracteristics (note 2) (v in =2.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.2 v out 101.5% v input voltage v in 6.0 v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 1 a load regulation v out /v out i out v in =2.5v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1.0a 1200 1300 mv quiescent current i q v in =2.5v, i out =0ma 60 75 a power supply rejectio n ratio psrr ripple 1vp-p v in =2.5v, i out =100ma f=100hz 68 db f=1khz 68 output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =2.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c/w psop-8 43.7 sot-223 50.9 to-252-2 (1) /(3) /(4) 35 to-263-3 22 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2114-1.5 electrical charact eristics (note 2) (v in =2.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.5 v out 101.5% v input voltage v in 6.0 v maximum output current i out(max) v in =2.5v, v out =1.478v to 1.523v 1 a load regulation v out /v out i out v in =2.5v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1.0a 800 1000 mv quiescent current i q v in =2.5v, i out =0ma 60 75 a power supply rejectio n ratio psrr ripple 1vp-p v in =2.5v, i out =100ma f=100hz 68 db f=1khz 68 output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =2.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c/w psop-8 43.7 sot-223 50.9 to-252-2 (1) /(3) /(4) 35 to-263-3 22 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 10 electrical characteristics (continued) ap2114-1.8 electrical ch aracteristics (note 2) (v in =2.8v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma v out 98.5% 1.8 v out 101.5% v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 1.0 a load regulation v out /v out i out v in =2.8v, 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 2.8v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1.0a 500 700 mv quiescent current i q v in =2.8v, i out =0ma 60 75 a power supply rejectio n ratio psrr ripple 1vp-p v in =2.8v, i out =100ma f=100hz 68 db f=1khz 68 output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =2.8v, v en in off mode 0.01 1.0 a start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c /w psop-8 43.7 sot-223 50.9 to-252-2 (1) /(3) /(4) 35 to-263-3 22 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 11 electrical characteristics (continued) ap2114-2.5 electrical ch aracteristics (note 2) (v in =3.5v, c in =4. 7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma v out 98.5% 2.5 v out 101.5% v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 1.0 a load regulation v out /v out i out vout=2.5v, v in =vout+1v 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 3.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =3.5v, i out =0ma 60 80 a power supply rejectio n ratio psrr ripple 1vp-p v in =3.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c /w psop-8 43.7 sot-223 50.9 to-252-2 (1) /(3) /(4) 35 to-263-3 22 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 12 electrical characteristics (continued) ap2114-3.3 electrical ch aracteristics (note 2) (v in =4.3v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma v out 98.5% 3.3 v out 101.5% v maximum output current i out(max) v in =4.3v, v out =3.25v to 3.35v 1.0 a load regulation v out /v out i out v in =4.3v, 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 4.3v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =4.3v, i out =0ma 65 90 a power supply rejectio n ratio psrr ripple 1vp-p v in =4.3v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =4.3v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c/w psop-8 43.7 sot-223 50.9 to-252-2 (1) /(3) /(4) 35 to-263-3 22 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 13 electrical characteristics (continued) ap2114-adj electrical charac teristics (note 2) (v in =2.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit reference voltage v ref v in =2.5v, 1ma i out 30ma v ref 98.5% 0.8 v ref 101.5% v input voltage v in 6.0 v maximum output current i out(max) v in =2.5v, v out = 0.788v to 0.812v 1 a load regulation v out /v out i out v in =2.5v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v quiescent current i q v in =2.5v, i out =0ma 60 75 a power supply rejectio n ratio psrr ripple 1vp-p v in =2.5v, i out =100ma f=100hz 68 db f=1khz 68 output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v v en low voltage v il enable logic low, regulator off 0.4 standby current i std v in =2.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance (junction to case) jc soic-8 74.6 c/w psop-8 43.7 note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only.
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 14 typical performance characteristics figure 4. ground current vs. output current figure 5. ground current vs. output current figure 6. ground current vs. output current figure 7. ground current vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f ground current ( a) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f ground current ( a) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 continuous airflow 10scfm ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v ground current ( a) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 450 500 ap2114_1.2v t a =-40 o c t a =25 o c t a =85 o c v in =2.5v ground current ( a) output current (a) continuous airflow 10scfm
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 8. quiescent current vs. temperature figure 9. quiescent current vs. temperature figure 10. quiescent current vs. temperature figure 11. quiescent current vs. temperature -40-20 0 20406080 30 40 50 60 70 80 90 100 continuous airflow 10scfm v in =2.5v i out =0ma ap2114_1.2v quiescent current ( a) temperature ( o c) -40 -20 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm ap2114_1.8v v in =2.8v no load c in =4.7 f c out =4.7 f quiescent current ( a) temperature ( o c) -40-20 0 20406080 30 40 50 60 70 80 90 100 continuous airflow 10scfm v in =4.3v i out =0ma ap2114_3.3v quiescent current ( a) temperature ( o c) -40 -20 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 continuous airflow 10scfm ap2114_2.5v v in =3.5v no load c in =4.7 f c out =4.7 f quiescent current ( a) temperature ( o c)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 16 typical performance characteristics (continued) figure 12. quiescent current vs. input voltage figure 13. quiescent current vs. input voltage figure 14. quiescent current vs. input voltage figure 15. quiescent current vs. input voltage 23456 10 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm t a = -40 o c t a = 25 o c t a = 85 o c ap2114_1.2v i out =0ma quiescent current ( a) input voltage (v) 3.5 4.0 4.5 5.0 5.5 6.0 30 40 50 60 70 80 90 100 110 continuous airflow 10scfm ap2114_3.3v i out =0ma quiescent current ( a) input voltage (v) t a = -40 o c t a = 25 o c t a = 85 o c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 30 40 50 60 70 80 90 100 110 continuous airflow 10scfm quiescent current ( a) input voltage (v) ap2114_1.8v i out =0ma t a =25 o c t a =-40 o c t a =85 o c 2.53.03.54.04.55.05.56.0 30 40 50 60 70 80 90 100 110 continuous airflow 10scfm quiescent current ( a) input voltage (v) ap2114_2.5v i out =0ma t a =25 o c t a =-40 o c t a =85 o c
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 17 typical performance characteristics (continued) figure 16. output voltage vs. temperat ure figure 17. output voltage vs. temperature figure 18. output voltage vs. temperature figure 19. output voltage vs. temperature -40-20 0 20406080 1.180 1.184 1.188 1.192 1.196 1.200 1.204 1.208 1.212 1.216 continuous airflow 10scfm ap2114_1.2v output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =500ma i out =1000ma v in =2.5v -40 -20 0 20 40 60 80 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 continuous airflow 10scfm i out =10ma i out =100ma i out =500ma i out =1000ma ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f output voltage (v) temperature ( o c) -40-20 0 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 continuous airflow 10scfm ap2114_3.3v v in =4.3v output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =500ma i out =1000ma -40-200 20406080 1.70 1.72 1.74 1.76 1.78 1.80 1.82 1.84 1.86 1.88 1.90 continuous airflow 10scfm i out =10ma i out =100ma i out =500ma i out =1000ma ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f output voltage (v) temperature ( o c)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 18 typical performance characteristics (continued) figure 20. output voltage vs. input voltage figure 21. output voltage vs. input voltage figure 22. output voltage vs. input voltage figure 23. output voltage vs. input voltage 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_3.3v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 continuous airflow 10scfm output voltage (v) input voltage (v) ap2114_1.8v t a =-40 o c t a =25 o c t a =85 o c c in =4.7 f c out =4.7 f i out =10ma 123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_1.2v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma 1234567 0.0 0.5 1.0 1.5 2.0 2.5 continuous airflow 10scfm ap2114_2.5v c in =4.7 f c out =4.7 f i out =10ma t a =-40 o c t a =25 o c t a =85 o c output voltage (v) input voltage (v)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 19 typical performance characteristics (continued) figure 24. output voltage vs. output current figure 25. output voltage vs. output current figure 26. output voltage vs. output current figure 27. output voltage vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 1.150 1.155 1.160 1.165 1.170 1.175 1.180 1.185 1.190 1.195 1.200 1.205 1.210 continuous airflow 10scfm ap2114_1.2v v in =2.5v output voltage (v) output current (a) t a =-40 o c t a =25 o c t a =85 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c output voltage (v) output current (a) ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 continuous airflow 10scfm v in =2.5v v in =3.3v ap2114_1.2v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c output voltage (v) output current (a) ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 20 typical performance characteristics (continued) figure 28. output voltage vs. output current figure 29. output voltage vs. output current figure 30. dropout voltage vs. output current figure 31. dropout voltage vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 continuous airflow 10scfm v in =4.3v v in =5v ap2114_3.3v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 continuous airflow 10scfm ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f dropout voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 continuous airflow 10scfm t a =-40 o c t a =25 o c t a =85 o c ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f dropout voltage (v) output current (a)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 21 typical performance characteristics (continued) figure 32. dropout voltage vs. output current figure 33. max. output current vs. input voltage figure 34. max. output current vs. i nput voltage figure 35. ma x. output current vs. input voltage 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 continuous airflow 10scfm ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c dropout voltage (v) output current (a) c in =4.7 f c out =4.7 f 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 continuous airflow 10scfm max. output current (a) input voltage (v) ap2114_1.8v c in =4.7 f c out =4.7 f v out =1.8x(1+ 1.5%) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 continuous airflow 10scfm max. output current (a) input voltage (v) ap2114_2.5v c in =4.7 f c out =4.7 f v out =2.5x(1+ 1.5%) 2.02.53.03.54.04.55.05.56. 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 continuous airflow 10scfm ap2114_1.2v m ax. o u t pu t c urren t (a) input voltage (v) t a =25 o c c in =4.7 f c out =4.7 f
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 22 typical performance characteristics (continued) figure 36. max. output current vs. input voltage figure 37. ma x. output current vs. input voltage note 4: considering power dissipation and thermal behavior, we suggest provide enough design margins in application design which are no less than 30% at least. figure 38. output short current vs. temperature fi gure 39. output short current vs. temperature 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 continuous airflow 10scfm ap2114_3.3v max. output current (a) input voltage (v) c in =4.7 f c out =4.7 f t a =25 o c -40 -20 0 20 40 60 80 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm v in =2.5v output short current (ma) temperature ( o c) ap2114_1.2v -40-20 0 20406080100120 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f output short current (ma) temperature ( o c) 4.0 4.5 5.0 5.5 6.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2114-3.3v to-252-2 (1)/(3) max. output current (a) input voltege (v) t a =-30 o c t a =25 o c t a =40 o c t a =50 o c t a =85 o c copper heat spreader area:100mm 2 still air note 4
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 23 typical performance characteristics (continued) figure 40. output short current vs. temperature figur e 41. output short current vs. temperature figure 42. psrr vs. frequency figure 43. psrr vs. frequency -40-20 0 20406080100120 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f output short current (ma) temperature ( o c) -40-20 0 20406080 20 30 40 50 60 70 80 90 100 continuous airflow 10scfm v in =4.3v ap2114_3.3v output short current (ma) temperature ( o c) 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_1.2v t a =25 o c c in =1 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_1.8v t a =25 o c c in =4.7 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 24 typical performance characteristics (continued) figure 44. psrr vs. frequency figure 45. psrr vs. frequency 0a 1a c in =4.7 f c out =4.7 f figure 46. load transient 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_2.5v t a =25 o c c in =4.7 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 i out =10ma i out =100ma ap2114_3.3v t a =25 o c c in =1 f c out =4.7 f psrr (db) frequency (hz) ripple=1vp-p
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 25 typical application figure 47. typical application of ap2114
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 26 mechanical dimensions sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) typ 6.300(0.248) 6.700(0.264) 1.750(0.069) typ 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 3 5 0 ( 0 . 0 1 4 ) 0.250(0.010) 0 10 0.900(0.035) min
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 27 mechanical dimensions (continued) to-252-2 (1) unit: mm(inch) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 3.800ref(0.150ref) 4.800(0.189) 6.500(0.256) 1.400(0.055) 1.780(0.070) 9.500(0.374) 9.900(0.390) 2.550(0.100) 2.900(0.114) 5.450(0.215) 6.250(0.246)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 28 mechanical dimensions (continued) to-252-2 (3) unit: mm(inch) 1.290.1 2.900ref 1 .400(0.05 5 ) 1 .700(0.06 7 ) 0.470(0.019) 0.600(0.024) 5 9 0 8 9.800(0.386) 10.400(0.409) 2.200(0.087) 2.380(0. 094) 0.900(0. 035) 1.100(0. 043) 4.700ref 6.500(0. 256) 6.700(0. 264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236 ) 6.200(0.244 ) 0.720(0.028) 0.850(0.033) 2.286(0. 090) bsc 0.720(0.028) 0.900(0. 035) 0.900(0.035) 1.250(0.049) 1.800ref 8 0 0.600(0. 0 24) 1.000(0.039) 7 3 9 5 5.250ref option 1 option 2
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 29 mechanical dimensions (continued) to-252-2 (4) unit: mm(inch)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 30 mechanical dimensions (continued) to-263-3 unit: mm(inch) 7 3 7 8 . 6 4 0 ( 0 . 3 4 0 ) 9 . 6 5 0 ( 0 . 3 8 0 ) 0.990(0.039) 0.510(0.020) 2.540(0.100) 1.150(0.045) 9.650(0.380) 3 1 4 . 7 6 0 ( 0 . 5 8 1 ) 8.840(0.348) 2.640(0.104) 0.020(0.001) 8 2 0 6 0.380(0.015) 2 . 3 9 0 ( 0 . 0 9 4 ) 0.360(0.014) 2 . 2 0 0 ( 0 . 0 8 7 ) 7 0 10.290(0.405) 4 . 0 7 0 ( 0 . 1 6 0 ) 4 . 8 2 0 ( 0 . 1 9 0 ) 1.390(0.055) 1.150(0.045) 1.390(0.055) 2.540(0.100) 1.270(0.050) 1.390(0.055) 2 . 6 9 0 ( 0 . 1 0 6 ) 1 5 . 7 4 0 ( 0 . 6 2 0 ) 0.250(0.010) 2.700(0.106) 0.400(0.016) 5 . 6 0 0 ( 0 . 2 2 0 ) 7.420(0.292) 7.980(0.314) 2.540(0.100) 2.540(0.100)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 31 mechanical dimensions (continued) soic-8 unit: mm(inch) r0.150(0.006)
data sheet 1a low noise cmos ldo regulator with enable ap2114 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 32 mechanical dimensions (continued) psop-8 unit: mm(inch) 3.202(0.126) 3.402(0.134)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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